Stephen W. Teitsworth

Stephen W. Teitsworth

Associate Professor of Physics

Office Location: 
089 Physics Bldg, Durham, NC 27708
Front Office Address: 
Box 90305, Durham, NC 27708-0305
Phone: 
(919) 660-2560

Overview

Prof. Stephen W. Teitsworth's research centers on experimental, computational, and theoretical studies of deterministic and stochastic nonlinear electronic transport in nanoscale systems. Three particular areas of current interest are: 1) stochastic nonlinear electronic transport phenomena in semiconductor superlattices and tunnel diode arrays; 2) complex bifurcations associated with the deterministic dynamics of electronic transport in negative differential resistance systems; and 3) strategies for stabilizing negative differential resistance systems against the formation of space-charge waves.

Education & Training

  • Ph.D., Harvard University 1986

Luo, K., et al. “Influence of higher harmonics on Poincaré maps derived from current self-oscillations in a semiconductor superlattice.” Physical Review B  Condensed Matter and Materials Physics, vol. 58, no. 19, Jan. 1998, pp. 12613–16. Scopus, doi:10.1103/PhysRevB.58.12613. Full Text

Blue, L. J., et al. “Dependence of current-voltage characteristics on Al mole fraction in GaAs/AlxGa1-xAs asymmetric double barrier structures.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 15, no. 3, May 1997, pp. 696–701.

Bergmann, M. J., et al. “Solitary-wave conduction in p-type Ge under time-dependent voltage bias..” Physical Review. B, Condensed Matter, vol. 53, no. 3, Jan. 1996, pp. 1327–35. Epmc, doi:10.1103/physrevb.53.1327. Full Text

Banoo, K. “Phonon scattering in novel superlattice-asymmetric double barrier resonant tunneling structure.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 14, no. 4, 1996, pp. 2725–30.

Turley, P. J., et al. “Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures.” Journal of Applied Physics, vol. 78, no. 10, Dec. 1995, pp. 6104–07. Scopus, doi:10.1063/1.360551. Full Text

de la Cruz RM, A., et al. “Interface phonons in spherical GaAs/AlxGa1-xAs quantum dots..” Physical Review. B, Condensed Matter, vol. 52, no. 3, July 1995, pp. 1489–92. Epmc, doi:10.1103/physrevb.52.1489. Full Text

Wallis, C. R., and S. W. Teitsworth. “Hopf bifurcations and hysteresis in resonant tunneling diode circuits.” Journal of Applied Physics, vol. 76, no. 7, Dec. 1994, pp. 4443–45. Scopus, doi:10.1063/1.357343. Full Text

Bonilla, L. L., et al. “Onset of current oscillations in extrinsic semiconductors under DC voltage bias.” Semiconductor Science and Technology, vol. 9, no. 5 S, Dec. 1994, pp. 599–602. Scopus, doi:10.1088/0268-1242/9/5S/054. Full Text

Teitsworth, S. W., et al. “Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures.” Semiconductor Science and Technology, vol. 9, no. 5 S, Dec. 1994, pp. 508–11. Scopus, doi:10.1088/0268-1242/9/5S/029. Full Text

Turley, P. J., and S. W. Teitsworth. “Phonon-assisted tunneling from a two-dimensional emitter state..” Physical Review. B, Condensed Matter, vol. 50, no. 12, Sept. 1994, pp. 8423–32. Epmc, doi:10.1103/physrevb.50.8423. Full Text

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